Chemical mechanical polishing conditioner capable of controlling polishing depth

ABSTRACT

Provided is a chemical mechanical polishing conditioner capable of controlling a polishing depth. The CMP conditioner capable of controlling the polishing depth comprises a substrate; a binding layer disposed on the substrate; multiple abrasive units placed on the binding layer; and multiple abrasive terminal units placed on the binding layer. Each abrasive unit has an abrasive unit substrate and an abrasive layer, and the abrasive layer is a diamond film formed by chemical vapor deposition and has multiple abrasive tips. The abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units to form a protrusion height. Accordingly, the CMP conditioner controls the polishing depth of an article to be conditioned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a chemical mechanical polishingconditioner capable of controlling polishing depth, especially to acombinational chemical mechanical polishing conditioner capable ofcontrolling polishing depth.

2. Description of the Prior Art(s)

Chemical Mechanical Polishing (abbreviated as CMP) is commonly used invarious industries to polish the surfaces of various articles made ofceramic, silicon, glass, quartz, or metal. With the applicability oflarge-scaled planarization of integrated semiconductor device, CMPbecomes a common planarization technique in the semiconductor process.

During the CMP process of the semiconductor, a pad is contacted with awafer or other semiconductor elements in conjunction with suitableabrasive slurry to remove impurities or protruding structures on thesurface of the wafer through both chemical reaction and mechanicalforce. When the pad has been used for a period of time, polishing debrisproduced from the CMP process will accumulate and stagnate on thesurface of the pad, thereby reducing the polishing effect andefficiency. Therefore, a chemical mechanical polishing conditioner canbe used to dress the surface of the pad for the desired polishing effectand efficiency.

In the preparation of a chemical mechanical polishing conditioner(abbreviated as CMP conditioner), multiple abrasive particles aremounted to a binding layer to form an abrasive layer. The abrasive layeris fixed to a surface of a substrate by brazing or sintering. Said CMPconditioner is suitable for dressing the pads; however, in moresophisticated semiconductor process with line-width below 45 nanometers,the rough surface of the pad that is too coarse will cause problems suchas scratch, local over-polishing, depression, or non-uniform thicknessof the wafer. As the line-width of integrated semiconductor device isdecreasing, the demand for the surface planarization of the wafer isincreasing, and same for the CMP conditioner.

Taiwan Patent No. 1228066 discloses a pad conditioner and a dressingmethod which provide a uniform abrasive surface. An abrasive surface 4is mounted on the edge of a metal support 2 of the pad conditioner 1.Multiple abrasive particles of various sizes are mounted on the abrasivesurface 4 to form a first abrasive particle group 5 and a secondabrasive particle group 6. An adjustment article 7 is mounted on themetal support 2 for arbitrarily adjusting the height difference 6between the front surfaces S1, S2 of the first abrasive particle group 5and the second abrasive particle group 6. However, when the padconditioner is applied to a pad, the pad conditioner cannot control apolishing depth of the pad.

Taiwan Patent Application Publication No. 201249595 discloses a padconditioner for CMP comprising a substrate having a first set ofprotrusions and a second set of protrusions. The first set of theprotrusions has a first average height and the second set of theprotrusions has a second average height. The first average height andthe second average height are different. The first set of theprotrusions includes multiple protrusions each having non-flat surfaceson their tops, and so does the second set of the protrusions. Apolycrystalline diamond layer is disposed on the non-flat surfaces ofthe first and second sets of the protrusions. The protrusions can bediscriminated by their heights, predetermined positions, or dimensionsof substrates. This prior invention provides various ways to measure theheight of the protrusions including an average height, a peak-to-valleyheight, or a protruding height from a back side of the pad conditionerfor CMP. However, the protrusions and the substrate are integrallyformed, failing to form a totally planarized surface to improve theabrasion efficiency and prolong lifetime of the CMP conditioner.

A conventional CMP conditioner normally comprises multiple diamondparticles attached on its substrate. Since the diamond particles aredifferent from each other in height, the polishing depths of the diamondparticles are also varied when the conventional CMP conditioner isapplied to a pad.

To overcome the shortcomings, the present invention provides a CMPconditioner to mitigate or obviate the aforementioned problems.

SUMMARY OF THE INVENTION

The main objective of the present invention is to provide a CMPconditioner capable of controlling the polishing depth. By assemblingthe small abrasive units and abrasive terminal units onto the largesubstrate, the polishing depths are controlled by the users' needs orvarious polishing conditions to achieve required cutting ability andpiercing uniformity.

To achieve the abovementioned objective, the present invention providesa CMP conditioner capable of controlling the polishing depth. The CMPconditioner capable of controlling the polishing depth comprises asubstrate, a binding layer disposed on the substrate, multiple abrasiveunits placed on the binding layer, and multiple abrasive terminal unitsplaced on the binding layer. Each abrasive unit has an abrasive layerand an abrasive unit substrate. The abrasive layer is a diamond filmformed by chemical vapor deposition and has multiple abrasive tips. Theabrasive tips of the abrasive units are relatively higher than surfacesof the abrasive terminal units. A protrusion height is between theabrasive units and the abrasive terminal units. When the CMP conditionercapable of controlling the polishing depth is applied to an abrasivearticle, a polishing depth of the abrasive article can be controlled bythe protrusion height.

The abrasive units and the abrasive terminal units are arrangedannularly. Besides, the abrasive units are arranged alternately with theabrasive terminal units. Preferably, the abrasive units are arrangedalternately to the abrasive terminal units in an annular pattern to makethe force of the abrasive units, which is acting on the abrasivearticle, uniformly distributed; therefore, the abrasion quality of theCMP conditioner capable of controlling the polishing depth can beimproved and the lifetime of the CMP conditioner capable of controllingthe polishing depth can be prolonged.

The abrasive units have a first tip height and a second tip height. Thefirst tip height is different from the second tip height. A heightdifference between the first tip height and the second tip height is 5micrometers to 100 micrometers, inclusive. Specifically, the heightdifference between the first tip height and the second tip height is 15micrometers to 60 micrometers, inclusive. Preferably, the abrasive unitshave a third tip height and a fourth tip height. A height differencebetween the third tip height and the fourth tip height is 25 micrometersto 50 micrometers, inclusive.

The abrasive tips of the abrasive units are relatively higher than thesurfaces of the abrasive terminal units by 5 micrometers to 100micrometers, inclusive. Preferably, the abrasive tips of the abrasiveunits are relatively higher than the surfaces of the abrasive terminalunits by 25 micrometers to 75 micrometers, inclusive. More preferably,the abrasive tips of the abrasive units are relatively higher than thesurfaces of the abrasive terminal units by 30 micrometers to 60micrometers, inclusive.

Preferably, heights of the abrasive units are equal, and a planarizedsurface of the CMP conditioner capable of controlling the polishingdepth is formed by the abrasive units.

Shape of the abrasive tips can be customized by the users' needs orvarious polishing conditions. The abrasive tips are in the shape of, butnot limited to, knife edges, cones, arcs, cylinders, pyramids, orprisms. Preferably, the abrasive tips are in the shape of pyramids.Alternatively, the abrasive tips are in the shape of prisms.Alternatively, the abrasive tips are cylindrical in shape.

Alignment directions or tip angles of the abrasive tips can becustomized by the users' needs or various polishing conditions. Thealignment directions of the abrasive tip are uniform, partially uniform,or different. Preferably, the abrasive tips are perpendicular to a pad.Alternatively, the abrasive tips are non-perpendicular to the pad.

The tip angles of the abrasive tips are equal, partially equal, ordifferent. Preferably, the tip angles of the abrasive tips are 60degrees, 90 degrees, or 120 degrees. Alternatively, the tip angles ofsome of the abrasive tips are 60 degrees and the tip angles of the otherabrasive tips are 90 degrees.

Besides, horizontal distances between any two neighboring abrasive tipscan be customized by the users' needs or various polishing conditions.The horizontal distances between any two neighboring abrasive tips areequal, partially equal, or different. Preferably, the horizontaldistances between any two neighboring abrasive tips are 1.5 times, 2times, or 3 times larger than an outer diameter of the abrasive tips.Alternatively, some of the horizontal distances between two neighboringabrasive tips are 2 times larger than the outer diameter of the abrasivetips and the other horizontal distances between two neighboring abrasivetips are 3 times larger than the outer diameter of the abrasive tips.

A thickness of the substrate, the thicknesses of the abrasive units, andthe thicknesses of the abrasive terminal units can be customized by theusers' needs or various polishing conditions. The thickness of thesubstrate ranges from 10 millimeters (abbreviated as mm) to 200 mm.Preferably, the thickness of the substrate ranges from 60 mm to 100 mm.More preferably, the thickness of the substrate is 80 mm. Thethicknesses of the abrasive units are equal, partially equal, ordifferent. Preferably, the thicknesses of the abrasive units range from5 mm to 100 mm. More preferably, the thicknesses of the abrasive unitsrange from 15 mm to 30 mm. More preferably, the thicknesses of theabrasive units are 20 mm. The thicknesses of the abrasive terminal unitsare equal, partially equal, or different. Preferably, the thicknesses ofthe abrasive terminal units range from 5 mm to 100 mm. More preferably,the thicknesses of the abrasive terminal units range from 15 mm to 30mm. More preferably, the thicknesses of the abrasive terminal units are20 mm.

Preferably, a middle layer is disposed between the abrasive layer andthe abrasive unit substrate to improve the binding strength between theabrasive layer and the abrasive unit substrate. The middle layer is madeof the group consisting of aluminum oxide, silicon carbide, and aluminumnitride. More preferably, the middle layer is made of silicon carbide.

The middle layer can be formed by, but not limited to, chemical vapordeposition, physical vapor deposition, soldering, or brazing.

The abrasive layer is made of monocrystalline diamond or polycrystallinediamond. Preferably, the abrasive layer is made of polycrystallinediamond, and a crystal dimension of the abrasive layer ranges from 5nanometers to 50 micrometers, inclusive. More preferably, the crystaldimension of the abrasive layer ranges from 10 nanometers to 20micrometers, inclusive.

The abrasive terminal units are made of an anti-abrasion material. Theanti-abrasion material is, but is not limited to, a ceramic material ora polymeric material. Preferably, the abrasive terminal units are madeof a ceramic material, and a crystal dimension of the ceramic materialis 5 nanometers to 50 micrometers, inclusive. Alternatively, the crystaldimension of the ceramic material is 10 nanometers to 20 micrometers,inclusive.

The abrasive unit substrate is a conductive substrate or an insulatingsubstrate. The conductive substrate is made of molybdenum, tungsten, ortungsten carbide. A patterned surface with multiple surface tips can beformed on the conductive substrate by electric discharge machining andthe abrasive layers are successively formed on the surface tips bychemical vapor deposition to obtain the abrasive tips. Alternatively, apatterned surface with multiple surface tips can be formed on theinsulating substrate by mechanical polishing or laser processing and theabrasive layers are successively formed on the surface tips by chemicalvapor deposition to obtain the abrasive tips. Alternatively, a surfaceof the abrasive unit substrate is flat. The abrasive layer is depositedon the abrasive unit substrate by chemical vapor deposition and has theabrasive tips. The insulating substrate is made of a ceramic material ora monocrystalline material. Preferably, the ceramic material is siliconcarbide. The monocrystalline material is silicon or aluminum oxide.

The binding layer can be customized by the users' needs or variouspolishing conditions. The binding layer is made of, but not limited to,a ceramic material, a brazing material, an electroplating material, ametallic material, or a polymeric material. Preferably, the bindinglayer is made of a brazing material. The brazing material is made of thegroup consisting of iron, cobalt, nickel, chromium, manganese, silicon,aluminum, and any combination thereof. Alternatively, the binding layeris made of a polymeric material. The polymeric material is epoxy resin,polyester resin, polyacrylate resin, or phenol resin.

A component or a dimension of the substrate can be customized by theusers' needs or various polishing conditions. The substrate is astainless steel substrate, a die steel substrate, a metal alloysubstrate, a ceramic substrate, a plastic substrate, or any combinationthereof. Preferably, the substrate is a stainless steel substrate.

Preferably, the substrate is a flat substrate or a notch substrate. Morepreferably, the substrate is the flat substrate. Alternatively, thesubstrate is the notch substrate.

The CMP conditioner capable of controlling the polishing depth isassembled by combining the small abrasive units and the small abrasiveterminal units with the large substrate to control the polishing depthsof the abrasive units to achieve required cutting ability and piercinguniformity.

Other objectives, advantages and novel features of the invention willbecome more apparent from the following detailed description when takenin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side view of a CMP conditioner capable of controlling thepolishing depth in accordance with Embodiment 1 of the presentinvention;

FIG. 2 is a side view of a CMP conditioner capable of controlling thepolishing depth in accordance with Embodiment 2 of the presentinvention;

FIG. 3 is a top view of the CMP conditioner capable of controlling thepolishing depth in accordance with Embodiment 1 of the presentinvention;

FIG. 4 is a top view of the CMP conditioner capable of controlling thepolishing depth in accordance with Embodiment 2 of the presentinvention;

FIG. 5A is a top view of an abrasive unit of the CMP conditioner capableof controlling the polishing depth in accordance with Embodiment 1 ofthe present invention;

FIG. 5B is a top view of an abrasive unit of a CMP conditioner capableof controlling the polishing depth in accordance with Embodiment 3 ofthe present invention; and

FIG. 5C is a top view of an abrasive unit of a CMP conditioner capableof controlling the polishing depth in accordance with Embodiment 4 ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

With reference to FIG. 1, the present invention provides a chemicalmechanical polishing conditioner capable of controlling the polishingdepth 1. The chemical mechanical polishing conditioner capable ofcontrolling the polishing depth 1 comprises a substrate 10 made ofstainless steel, a binding layer 11, multiple abrasive units 12, andmultiple abrasive terminal units 15 made of silicon carbide. Thesubstrate 10 is a flat substrate and has a thickness of 80 mm. Thebinding layer 11 is disposed on the substrate 10. Each abrasive unit 12has an abrasive unit substrate 13 and an abrasive layer 14. The abrasiveunit substrate 13 is a ceramic substrate made of silicon carbide. Asurface of the abrasive unit substrate 13 is a flat surface. Theabrasive layer 14 is successively formed on the surface tips by chemicalvapor deposition and has multiple abrasive tips. The abrasive tips arein the shape of pyramids. Specifically, with reference to FIG. 5A, theabrasive tips are continuously arranged on the abrasive unit substrate13 with an array pattern. The abrasive tips are in the shape ofquadrangular pyramids. Alignment directions of the abrasive tips areuniform. Tip angles of the abrasive tips are equal. The abrasive tips ofthe abrasive units 12 are relatively higher than surfaces of theabrasive terminal units 15 by 5 micrometers to 100 micrometers,inclusive. The abrasive units 12 and the abrasive terminal units 15 arefixed on the substrate 10 through the binding layer 11. Thicknesses ofthe abrasive units 12 of the chemical mechanical polishing conditionercapable of controlling the polishing depth 1 are equal, i.e., thethickness of the binding layer 11 is fixed and the thicknesses of theabrasive unit substrates 13 are equal. A protrusion height is betweenthe abrasive units 12 and the abrasive terminal units 15. When thechemical mechanical polishing conditioner 1 is applied to an abrasivearticle, a polishing depth of the abrasive article can be controlled bythe protrusion height. With reference to FIG. 3, the abrasive units 12and the abrasive terminal units 15 are on the substrate 10 and thebinding layer 11. The abrasive units 12 are arranged alternately withthe abrasive terminal units 15 in an annular pattern to make the forceof the abrasive units 12 uniformly distributed; therefore, the abrasionquality of the chemical mechanical polishing conditioner capable ofcontrolling the polishing depth 1 is improved and the lifetime of thechemical mechanical polishing conditioner capable of controlling thepolishing depth 1 is prolonged.

Embodiment 2

With reference to FIG. 2, the CMP conditioner capable of controlling thepolishing depth 2 in Embodiment 2 is similar with the CMP conditionercapable of controlling the polishing depth in Embodiment 1. Thedifference between the two embodiments is that thicknesses of theabrasive units of the CMP conditioner capable of controlling thepolishing depth in Embodiment 1 are equal, i.e., the thickness of thebinding layer is fixed and the thicknesses of the abrasive unitsubstrates are equal. However, the abrasive units of the CMP conditionercapable of controlling the polishing depth 2 in Embodiment 2 have afirst tip height and a second tip height, i.e., the thickness of thebinding layer is fixed but the abrasive unit substrates have differentthicknesses.

The CMP conditioner capable of controlling the polishing depth 2 of thepresent embodiment comprises the substrate 20 made of stainless steel,the binding layer 21, the abrasive units 22, 22′, and the abrasiveterminal units 25 which are made of silicon carbide. The substrate 20 isa flat substrate and has a thickness of 80 mm. The binding layer 21 isdisposed on the substrate 20. Each abrasive unit 22, 22′ has theabrasive unit substrate 23, 23′ and the abrasive layer 24, 24′. Theabrasive unit substrate 23, 23′ is a ceramic substrate made of siliconcarbide. The abrasive unit substrate 23, 23′ has two differentthicknesses, 20 mm and 30 mm. The surface of the abrasive unit substrate23, 23′ is flat surface. The abrasive layer 24, 24′ is deposited on theabrasive unit substrate 23, 23′ by chemical vapor deposition. Theabrasive layer 24, 24′ has the abrasive tips. The abrasive tips are inthe shape of pyramids, more specifically, quadrangular pyramids (such asFIG. 5A). The abrasive tips are continuously arranged on the abrasiveunit substrate 23, 23′ with an array pattern. The alignment directionsof the abrasive tips are uniform. The tip angles of the abrasive tip areequal. The abrasive units 22 have a first tip height and the abrasiveunits 22′ have a second tip height. A height difference between thefirst tip height and the second tip height is 5 micrometers to 100micrometers, inclusive. The abrasive tips of the abrasive units 22, 22′are relatively higher than the surfaces of the abrasive terminal unitsby 5 micrometers to 100 micrometers, inclusive. The abrasive units 22,22′ and the abrasive terminal units 25 are fixed on the substrate 20 viathe binding layer 11. A protrusion height is between the abrasive units22, 22′ and the abrasive terminal units 25. When the chemical mechanicalpolishing conditioner capable of controlling the polishing depth 2 isapplied to an abrasive article, a polishing depth of the abrasivearticle can be controlled by the protrusion height. With reference toFIG. 4, the abrasive units 22, 22′ and the abrasive terminal units 25are on the substrate 20 and the binding layer 21. Each abrasive unit 22,22′ has the abrasive unit substrate 23, 23′ and the abrasive layer 24,24′. Surfaces of the abrasive unit substrates 23, 23′ are patterned toform the abrasive tips. Besides, the abrasive units 22 having the firsttip height are shown in the shape of pyramids with grids and theabrasive units 22′ having the second tip height are shown in the shapeof pyramids in white color. The abrasive units 22, 22′ are arrangedalternately with the abrasive terminal units in an annular pattern.

Embodiment 3

The CMP conditioner capable of controlling the polishing depth inEmbodiment 3 is similar to the CMP conditioner capable of controllingthe polishing depth in Embodiment 1. The difference between the twoembodiments is that the abrasive tips of the CMP conditioner capable ofcontrolling the polishing depth in Embodiment 1 are in the shape ofpyramids and the abrasive tips of the CMP conditioner capable ofcontrolling the polishing depth in Embodiment 3 are in a different shapefrom the abrasive tips of the CMP conditioner capable of controlling thepolishing depth in Embodiment 1.

With reference to FIG. 5A, the abrasive tips 16 of the CMP conditionercapable of controlling the polishing depth in Embodiment 1 are in theshape of pyramids and the abrasive tips 16 are continuously arranged onthe abrasive unit substrate 13 with an array pattern. With reference toFIG. 5B, the abrasive tips 36 of Embodiment 3 are in the shape ofprisms, specifically, quadrangle prisms. The abrasive tips 36 of theabrasive layer 34 are continuously arranged on the abrasive unitsubstrate 33 with an array pattern.

Embodiment 4

The CMP conditioner capable of controlling the polishing depth inEmbodiment 4 is similar to the CMP conditioner capable of controllingthe polishing depth in Embodiment 1. The difference between the twoembodiments is that the abrasive tips of the CMP conditioner capable ofcontrolling the polishing depth in Embodiment 1 are in the shape ofpyramids and the abrasive tips of the CMP conditioner capable ofcontrolling the polishing depth in Embodiment 4 are in a different shapefrom the abrasive tips of the CMP conditioner capable of controlling thepolishing depth in Embodiment 1.

With reference to FIG. 5A, the abrasive tips 16 of the CMP conditionercapable of controlling the polishing depth in Embodiment 1 are in theshape of pyramids and the abrasive tips 16 are continuously arranged onthe abrasive unit substrate 13 with an array pattern. With reference toFIG. 5C, the abrasive tips 46 of Embodiment 4 are cylindrical in shape.The abrasive tips 46 of the abrasive layer 44 are continuously arrangedon the abrasive unit substrate 43 with an array pattern.

Even though numerous characteristics and advantages of the presentinvention have been set forth in the foregoing description, togetherwith details of the structure and features of the invention, thedisclosure is illustrative only. Changes may be made in the details,especially in matters of shape, size, and arrangement of parts withinthe principles of the invention to the full extent indicated by thebroad general meaning of the terms in which the appended claims areexpressed.

What is claimed is:
 1. A chemical mechanical polishing conditionercapable of controlling the polishing depth, comprising: a substrate; abinding layer disposed on the substrate; multiple abrasive units placedon the binding layer, each abrasive unit having an abrasive layer and anabrasive unit substrate, the abrasive layer being a diamond film formedby chemical vapor deposition and having multiple abrasive tips; andmultiple abrasive terminal units placed on the binding layer; whereinthe abrasive tips of the abrasive units are relatively higher thansurfaces of the abrasive terminal units, and a protrusion height isbetween the abrasive units and the abrasive terminal units.
 2. Thechemical mechanical polishing conditioner capable of controlling thepolishing depth as claimed in claim 1, wherein the abrasive units andthe abrasive terminal units are arranged annularly.
 3. The chemicalmechanical polishing conditioner capable of controlling the polishingdepth as claimed in claim 1, wherein the abrasive units are arrangedalternately with the abrasive terminal units.
 4. The chemical mechanicalpolishing conditioner capable of controlling the polishing depth asclaimed in claim 1, wherein the abrasive units have a first tip heightand a second tip height and the first tip height is different from thesecond tip height.
 5. The chemical mechanical polishing conditionercapable of controlling the polishing depth as claimed in claim 4,wherein a height difference between the first tip height and the secondtip height is 5 micrometers to 100 micrometers, inclusive.
 6. Thechemical mechanical polishing conditioner capable of controlling thepolishing depth as claimed in claim 5, wherein a height differencebetween the first tip height and the second tip height is 15 micrometersto 60 micrometers, inclusive.
 7. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 4, wherein the abrasive units have a third tip height and a fourthtip height.
 8. The chemical mechanical polishing conditioner capable ofcontrolling the polishing depth as claimed in claim 1, wherein theabrasive tips of the abrasive units are relatively higher than thesurfaces of the abrasive terminal units by 5 micrometers to 100micrometers, inclusive.
 9. The chemical mechanical polishing conditionercapable of controlling the polishing depth as claimed in claim 1,wherein heights of the abrasive units are equal, and a planarizedsurface of the chemical mechanical polishing conditioner is formed bythe abrasive units.
 10. The chemical mechanical polishing conditionercapable of controlling the polishing depth as claimed in claim 1,wherein the abrasive tips are in the shape of knife edges, cones, arcs,cylinders, pyramids, or prisms.
 11. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 1, wherein alignment directions of the abrasive tips are uniform,partially uniform, or different.
 12. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 1, wherein tip angles of the abrasive tips are equal, partiallyequal, or different.
 13. The chemical mechanical polishing conditionercapable of controlling the polishing depth as claimed in claim 1,wherein horizontal distances between any two neighboring abrasive tipsare equal, partially equal, or different.
 14. The chemical mechanicalpolishing conditioner capable of controlling the polishing depth asclaimed in claim 1, wherein thicknesses of the abrasive units are equal,partially equal, or different.
 15. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 1, wherein a middle layer is disposed between the abrasive layerand the abrasive unit substrate.
 16. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 15, wherein the middle layer is made of the group consisting ofaluminum oxide, silicon carbide, and aluminum nitride.
 17. The chemicalmechanical polishing conditioner capable of controlling the polishingdepth as claimed in claim 1, wherein the abrasive unit substrate is aconductive substrate or an insulating substrate.
 18. The chemicalmechanical polishing conditioner capable of controlling the polishingdepth as claimed in claim 1, wherein the abrasive terminal units aremade of an anti-abrasion material.
 19. The chemical mechanical polishingconditioner capable of controlling the polishing depth as claimed inclaim 1, wherein the binding layer is made of a ceramic material, abrazing material, an electroplating material, a metallic material, or apolymeric material.
 20. The chemical mechanical polishing conditionercapable of controlling the polishing depth as claimed in claim 19,wherein the polymeric material is epoxy resin, polyester resin,polyacrylate resin, or phenol resin.
 21. The chemical mechanicalpolishing conditioner capable of controlling the polishing depth asclaimed in claim 19, wherein the brazing material is made of the groupconsisting of iron, cobalt, nickel, chromium, manganese, silicon,aluminum, and any combination thereof.
 22. The chemical mechanicalpolishing conditioner capable of controlling the polishing depth asclaimed in claim 1, wherein the substrate is a stainless steelsubstrate, a die steel substrate, a metal alloy substrate, a ceramicsubstrate, a plastic substrate, or any combination thereof.
 23. Thechemical mechanical polishing conditioner capable of controlling thepolishing depth as claimed in claim 1, wherein the substrate is a flatsubstrate or a notch substrate.